High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

被引：2

作者：

Fochuk, P. ^{[1
]}

Nakonechnyi, I ^{[1
]}

Kopach, O. ^{[1
]}

Verzhak, Ye ^{[1
]}

Panchuk, O. ^{[1
]}

Komar, V

Terzin, I

Kutnij, V

Rybka, A.

Nykoniuk, Ye

Bolotnikov, A. E.

Camarda, G. C.

Cui, Y.

Hossain, A.

Kim, K. H.

Yang, G.

James, R. B.

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XIV | 2012年 / 8507卷

关键词：

Single crystals; Cd0.9Zn0.1Te:In; point defects; inclusions; annealing; Hall effect; high-pressure Bridgman growth method;

D O I：

10.1117/12.929035

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We evaluated the effect of high-temperature treatment of Cd0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium-and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at similar to 730 K sharply increased the electrical conductivity (by similar to 1-2 orders-of-magnitude). Plots of the temperature-and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kroger's theory of quasi-chemical reactions between point defects in solids.

引用

页数：9

共 15 条

[1]

Abyzov A. S., 2004, TECHNOLOGY CONSTRUCT, V3, P3

[2] Gamma radiation detectors for safeguards applications [J].

Carchon, R. ;

Moeslinger, M. ;

Bourva, L. ;

Bass, C. ;

Zendel, M. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 579 (01) :380-383

[3]

Drighil A., 1999, MJ CONDENSED MATTER, V2, P54

[4] The nature of point defects in CdTe [J].

Fochuk, P. ;

Grill, R. ;

Panchuk, O. .

JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) :1354-1359

[5] Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing [J].

Fochuk, P. ;

Grill, R. ;

Kopach, O. ;

Bolotnikov, A. E. ;

Belas, E. ;

Bugar, M. ;

Camarda, G. ;

Chan, W. ;

Cui, Y. ;

Hossain, A. ;

Kim, K. H. ;

Nakonechnyi, I. ;

Panchuk, O. ;

Yang, G. ;

James, R. B. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (02) :256-263

[6] Effect of Cd0.9Zn0.1Te:In Crystals Annealing on Their High-Temperature Electrical Properties [J].

Fochuk, P. ;

Grill, R. ;

Nakonechnyi, I. ;

Kopach, O. ;

Panchuk, O. ;

Verzhak, Ye. ;

Belas, E. ;

Bolotnikov, A. E. ;

Yang, G. ;

James, R. B. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (05) :2346-2351

[7] Indium dopant behaviour in CdTe single crystals [J].

Fochuk, P ;

Panchuk, O ;

Feychuk, P ;

Shcherbak, L ;

Savitskyi, A ;

Parfenyuk, O ;

Ilashchuk, M ;

Hage-Ali, M ;

Siffert, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 458 (1-2) :104-112

[8] Point Defects in CdZnTe Crystals Grown by Different Techniques [J].

Gul, R. ;

Bolotnikov, A. ;

Kim, H. K. ;

Rodriguez, R. ;

Keeter, K. ;

Li, Z. ;

Gu, G. ;

James, R. B. .

JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (03) :274-279

[9] HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals [J].

Kolesnikov, NN ;

James, RB ;

Berzigiarova, NS ;

Kulakov, MP .

X-RAY AND GAMMA-RAY DETECTORS AND APPLICATIONS IV, 2002, 4784 :93-104

[10]

Komar V. K., 2002, SURFACE XRAYS SYNCHR, V3, P97

← 1 2 →