Fabrication of pyrite FeS2 thin films by sulfurizing oxide precursor films deposited via successive ionic layer adsorption and reaction method

被引：28
|
作者：
Sun, Kaiwen [1 ]
Su, Zhenghua [1 ]
Yang, Jia [1 ]
Han, Zili [1 ]
Liu, Fangyang [1 ,2 ]
Lai, Yanqing [1 ,3 ]
Li, Jie [1 ,3 ]
Liu, Yexiang [1 ]
机构：
[1] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China
[2] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[3] Cent South Univ Shenzhen, Res Inst, Engn Res Ctr High Performance Battery Mat & Devic, Shenzhen 518057, Peoples R China
来源：
THIN SOLID FILMS | 2013年 / 542卷
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Iron sulfide; Thin films; Solar cells; Sulfurization; Successive ionic layer adsorption and reaction; CHEMICAL-VAPOR-DEPOSITION; SEMICONDUCTING IRON PYRITE; REACTION SILAR METHOD; PHOTOVOLTAIC CELLS; ENERGY-CONVERSION; SPRAY-PYROLYSIS; N-FES2; PYRITE; GROWTH; NANOCRYSTALS; ABSORPTION;
D O I：
10.1016/j.tsf.2013.06.091
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Iron pyrite (FeS2) is a naturally abundant and nontoxic semiconductor that can potentially be used in photovoltaic devices. In this report, pure pyrite FeS2 thin films with homogeneous morphology and ideal composition are fabricated by sulfurizing Fe2O3 precursor thin films deposited via successive ionic layer adsorption and reaction method. The formation mechanism of FeS2 is identified by X-ray photoelectron spectroscopy. The optical and electrical (including photoelectrochemical) measurements show that the prepared pyrite FeS2 thin films have high absorption coefficient, suitable band gap, p-type conductivity and good photo-electrical conversion ability. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：123 / 128
页数：6
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