A physical frequency-dependent compact model for RF integrated inductors

被引：50

作者：

Sieiro, J ^{[1
]}

López-Villegas, JM ^{[1
]}

Cabanillas, J ^{[1
]}

Osorio, JA ^{[1
]}

Samitier, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 01期

关键词：

Eddy currents; inductor layout optimization; inductor model; RF ICs; self-resonance;

D O I：

10.1109/22.981290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A frequency-dependent compact model for inductors in high ohmic substrates, which is based on an energy point-of-view, is developed. This approach enables the description of the most important coupling phenomena that take place inside the device. Magnetically induced losses are quite accurately calculated and coupling between electric and magnetic fields is given by means of a delay constant. The later coupling phenomenon provides a modified procedure for the computation of the fringing capacitance value, when the self-resonance frequency of the inductor is used as a fitting parameter. The model takes into account the width of every metal strip and the pitch between strips. This enables the description of optimized layout inductors. Data from experiments and electromagnetic simulators are presented to test the accuracy of the model.

引用

页码：384 / 392

页数：9

共 26 条

[1] RF circuit design aspects of spiral inductors on silicon [J].