InP(100) surface passivation with aqueous sodium sulfide solution

被引：14

作者：

Lebedev, Mikhail, V ^{[1
]}

Serov, Yuriy M. ^{[1
]}

Lvova, Tatiana, V ^{[1
]}

Endo, Raimu ^{[2
]}

Masuda, Takuya ^{[2
]}

Sedova, Irina, V ^{[1
]}

机构：

[1] Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia

[2] Natl Inst Mat Sci NIMS, Res Ctr Adv Measurement & Characterizat, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED SURFACE SCIENCE | 2020年 / 533卷

基金：

俄罗斯基础研究基金会;

关键词：

Indium phosphide; Surface modification; Surface chemistry; Aqueous solution; XPS; Photoluminescence; INDIUM-PHOSPHIDE NANOWIRES; TEMPERATURE-DEPENDENCE; SOLAR-CELLS; INP; WATER; SULFUR; RECOMBINATION; ENHANCEMENT; ADSORPTION; PARAMETERS;

D O I：

10.1016/j.apsusc.2020.147484

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Passivation of n-InP(100) surface with an aqueous sodium sulfide solution was investigated by photoluminescence and x-ray photoelectron spectroscopy techniques. It was found that even a brief treatment for 1 min turns out to be enough for an essential enhancement of the photoluminescence intensity, which comes amid etching off the surface indium phosphate layer and formation of In-S and In-OH surface chemical bonds. A longer sulfide treatment results in a smaller photoluminescence enhancement due to formation of indium oxide, in addition to In-S and In-OH bonds. Both native-oxide-covered and sulfide-treated n-InP(100) surfaces have almost no band bending. The enhancement of photoluminescence intensity after sulfide treatment can be explained by modification of the surface states spectrum due to the transformation of the surface chemical bonds.

引用

页数：6

共 50 条

[1] Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide [J].

Adelmann, Christoph ;

Cuypers, Daniel ;

Tallarida, Massimo ;

Rodriguez, Leonard N. J. ;

De Clercq, Astrid ;

Friedrich, Daniel ;

Conard, Thierry ;

Delabie, Annelies ;

Seo, Jin Won ;

Locquet, Jean-Pierre ;

De Gendt, Stefan ;

Schmeisser, Dieter ;

Van Elshocht, Sven ;

Caymax, Matty .

CHEMISTRY OF MATERIALS, 2013, 25 (07) :1078-1091

[2] Chalcogenide passivation of III-V semiconductor surfaces [J].

Bessolov, VN ;

Lebedev, MV .

SEMICONDUCTORS, 1998, 32 (11) :1141-1156

[3] Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation [J].

Bessolov, VN ;

Konenkova, EV ;

Lebedev, MV .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :376-379

[4] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[5] Study of InP Surfaces after Wet Chemical Treatments [J].

Cuypers, D. ;

van Dorp, D. H. ;

Tallarida, M. ;

Brizzi, S. ;

Conard, T. ;

Rodriguez, L. N. J. ;

Mees, M. ;

Arnauts, S. ;

Schmeisser, D. ;

Adelmann, C. ;

De Gendt, S. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (01) :N3016-N3022

[6] Nanometre-scale electronics with III-V compound semiconductors [J].

del Alamo, Jesus A. .

NATURE, 2011, 479 (7373) :317-323

[7] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[8] In situ X-ray photoelectron spectroscopy using a conventional Al-Kα source and an environmental cell for liquid samples and solid-liquid interfaces [J].

Endo, Raimu ;

Watanabe, Daisuke ;

Shimomura, Masaru ;

Masuda, Takuya .

APPLIED PHYSICS LETTERS, 2019, 114 (17)

[9] Interaction of liquid water with the p-GaInP2(100) surface covered with submonolayer oxide [J].

Hajduk, Andreas ;

Lebedev, Mikhail V. ;

Kaiser, Bernhard ;

Jaegermann, Wolfram .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (32) :21144-21150

[10] Water adsorption on UHV cleaved InP(110) surfaces [J].

Henrion, O ;

Klein, A ;

Jaegermann, W .

SURFACE SCIENCE, 2000, 457 (1-2) :L337-L341

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