InP(100) surface passivation with aqueous sodium sulfide solution

被引:14
作者
Lebedev, Mikhail, V [1 ]
Serov, Yuriy M. [1 ]
Lvova, Tatiana, V [1 ]
Endo, Raimu [2 ]
Masuda, Takuya [2 ]
Sedova, Irina, V [1 ]
机构
[1] Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia
[2] Natl Inst Mat Sci NIMS, Res Ctr Adv Measurement & Characterizat, Tsukuba, Ibaraki 3050044, Japan
基金
俄罗斯基础研究基金会;
关键词
Indium phosphide; Surface modification; Surface chemistry; Aqueous solution; XPS; Photoluminescence; INDIUM-PHOSPHIDE NANOWIRES; TEMPERATURE-DEPENDENCE; SOLAR-CELLS; INP; WATER; SULFUR; RECOMBINATION; ENHANCEMENT; ADSORPTION; PARAMETERS;
D O I
10.1016/j.apsusc.2020.147484
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Passivation of n-InP(100) surface with an aqueous sodium sulfide solution was investigated by photoluminescence and x-ray photoelectron spectroscopy techniques. It was found that even a brief treatment for 1 min turns out to be enough for an essential enhancement of the photoluminescence intensity, which comes amid etching off the surface indium phosphate layer and formation of In-S and In-OH surface chemical bonds. A longer sulfide treatment results in a smaller photoluminescence enhancement due to formation of indium oxide, in addition to In-S and In-OH bonds. Both native-oxide-covered and sulfide-treated n-InP(100) surfaces have almost no band bending. The enhancement of photoluminescence intensity after sulfide treatment can be explained by modification of the surface states spectrum due to the transformation of the surface chemical bonds.
引用
收藏
页数:6
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