Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs

被引：11

作者：

Warner, Jeffrey H. ^{[1
]}

McMorrow, Dale ^{[1
]}

Buchner, Stephen ^{[1
]}

Boos, J. Brad ^{[1
]}

Roche, Nicolas ^{[1
]}

Paillet, Philippe ^{[2
]}

Gaillardin, Marc ^{[2
]}

Blackmore, Ewart ^{[3
]}

Trinczek, Michael ^{[3
]}

Ramachandran, Vishwa ^{[4
]}

Reed, Robert A. ^{[4
,5
]}

Schrimpf, Ronald D. ^{[4
,5
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

[2] DIF, DAM, CEA, F-91297 Arpajon, France

[3] TRIUMF, Vancouver, BC V6T 2A3, Canada

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[5] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期

关键词：

Charge collection; GaAs; heavy ions; high electron mobility transistor (HEMT); InAs; metal semiconductor field effect transistor (MESFET); protons; SET cross section; single-event transients (SETs); ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; BUFFER LAYER; HETEROSTRUCTURE FETS; IRRADIATION; MECHANISMS; SIMULATION; RADIATION;

D O I：

10.1109/TNS.2013.2261091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single-event transient (SET) response of two different n-channel III-V field-effect transistor technologies (GaAs MESFET, InAlSb/InAs HEMT) is measured for the first time for MeV proton irradiation. The characteristics and mechanisms of the proton-induced response of these two technologies are presented and discussed in terms of previous heavy-ion and pulsed-laser measurements. The measurements show that the maximum collected charge, event cross section, pulse amplitude, and full width at half-maximum (FWHM) all increase with increasing proton energy, and decrease as the devices are biased more strongly in depletion. The results are consistent with the presence of charge-enhancement processes that are a consequence of ionization-induced hole accumulation in the substrate/buffer regions of the devices. The InAlSb/InAs HEMT measurements reveal at least an order-of-magnitude lower sensitivity to proton-induced transient generation than the GaAs MESFET in terms of both collected charge and cross section.

引用

页码：2651 / 2659

页数：9

共 20 条

[11] Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer [J].