Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs

被引：11
作者：
Warner, Jeffrey H. [1 ]
McMorrow, Dale [1 ]
Buchner, Stephen [1 ]
Boos, J. Brad [1 ]
Roche, Nicolas [1 ]
Paillet, Philippe [2 ]
Gaillardin, Marc [2 ]
Blackmore, Ewart [3 ]
Trinczek, Michael [3 ]
Ramachandran, Vishwa [4 ]
Reed, Robert A. [4 ,5 ]
Schrimpf, Ronald D. [4 ,5 ]
机构：
[1] Naval Res Lab, Washington, DC 20375 USA
[2] DIF, DAM, CEA, F-91297 Arpajon, France
[3] TRIUMF, Vancouver, BC V6T 2A3, Canada
[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[5] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期
关键词：
Charge collection; GaAs; heavy ions; high electron mobility transistor (HEMT); InAs; metal semiconductor field effect transistor (MESFET); protons; SET cross section; single-event transients (SETs); ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; BUFFER LAYER; HETEROSTRUCTURE FETS; IRRADIATION; MECHANISMS; SIMULATION; RADIATION;
D O I：
10.1109/TNS.2013.2261091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The single-event transient (SET) response of two different n-channel III-V field-effect transistor technologies (GaAs MESFET, InAlSb/InAs HEMT) is measured for the first time for MeV proton irradiation. The characteristics and mechanisms of the proton-induced response of these two technologies are presented and discussed in terms of previous heavy-ion and pulsed-laser measurements. The measurements show that the maximum collected charge, event cross section, pulse amplitude, and full width at half-maximum (FWHM) all increase with increasing proton energy, and decrease as the devices are biased more strongly in depletion. The results are consistent with the presence of charge-enhancement processes that are a consequence of ionization-induced hole accumulation in the substrate/buffer regions of the devices. The InAlSb/InAs HEMT measurements reveal at least an order-of-magnitude lower sensitivity to proton-induced transient generation than the GaAs MESFET in terms of both collected charge and cross section.
引用
收藏
页码：2651 / 2659
页数：9
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