Influence of the electric field on the excitonic luminescence of epitaxial GaN films

被引：4

作者：

Nelson, DK

Kagan, VD

Kalinina, EV

Jacobson, MA

机构：

[1] A.F. Ioffe Phys.-Technical Institute, St. Petersburg, 194 021

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

基金：

俄罗斯基础研究基金会;

关键词：

excitons; electric field effect;

D O I：

10.1016/S0022-2313(96)00338-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quenching and enhancement of exciton photoluminescence were observed when applying the external voltage to the Shottky barrier. The effect is explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. The value of ionization electric field for free exciton E-0 = 10(5) V/cm is estimated.

引用

页码：865 / 866

页数：2