Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

被引：12

作者：

Anand, Mulagumoottil Jesudas ^{[1
]}

Ng, Geok Ing ^{[1
]}

Arulkumaran, Subramaniam ^{[2
]}

Syamal, Binit ^{[1
]}

Zhou, Xing ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 10期

关键词：

CURRENT COLLAPSE; GAN; DESIGN; HEMTS; GATE;

D O I：

10.7567/APEX.8.104101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The distribution of trap energy (DTE) levels was observed in the energy band gap of buffer GaN by temperature-dependent current transient measurements on AlGaN/GaN HEMTs under fully ON drain-stress (V-D[ON]_(Stress)) conditions. The activation energies (E-a's) obtained from current transients increase with increasing V-D[ON]_(Stress). Using a multitrap energy (MTE) model, the applied-V-D[ON]_(Stress)-dependent E-a is attributed to DTE levels in the GaN energy band gap, rather than to discrete single trap energy levels. An effective activation energy (E-a_(eff)) corresponding to trap energy levels activated by the applied V-D[ON]_(Stress) is thus obtained. This observation is validated with two-dimensional numerical simulations. This study will help device designers develop a "DTE-dependent" emission time constant model that is readily applicable for the reliability modelling of future GaN-based circuits. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

共 30 条

[1]

Albahrani SA, 2009, 2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, P1692

[2] Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) [J].

Anand, M. J. ;

Ng, G. I. ;

Arulkumaran, S. ;

Kumar, C. M. Manoj ;

Ranjan, K. ;

Vicknesh, S. ;

Foo, S. C. ;

Syamal, B. ;

Zhou, X. .

APPLIED PHYSICS LETTERS, 2015, 106 (08)

[3]

Anand M. J., 2013, 71 ANN DEV RES C

[4]

[Anonymous], 2009, ATLAS US MAN DEV SIM

[5] Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-μm T-gate AlGaN/GaN HEMTs on Silicon by (NH4)2Sx Treatment [J].

Arulkumaran, S. ;

Ng, G. I. ;

Vicknesh, S. .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (11) :1364-1366

[6] Field dependent transformation of electron traps in GaN p-n diodes grown by metal-organic chemical vapour deposition [J].

Asghar, M ;

Muret, P ;

Beaumont, B ;

Gibart, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 113 (03) :248-252

[7] Trapping effects in GaN and SiC microwave FETs [J].

Binari, SC ;

Klein, PB ;

Kazior, TE .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1048-1058

[8] Fabrication and characterization of GaN FETs [J].

Binari, SC ;

Kruppa, W ;

Dietrich, HB ;

Kelner, G ;

Wickenden, AE ;

Freitas, JA .

SOLID-STATE ELECTRONICS, 1997, 41 (10) :1549-1554

[9] Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements [J].

Bisi, Davide ;

Meneghini, Matteo ;

de Santi, Carlo ;

Chini, Alessandro ;

Dammann, Michael ;

Brueckner, Peter ;

Mikulla, Michael ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3166-3175

[10] Simulation of gate lag and current collapse in gallium nitride field-effect transistors [J].

Braga, N ;

Mickevicius, R ;

Gaska, R ;

Shur, MS ;

Khan, MA ;

Simin, G .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4780-4782

← 1 2 3 →