A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

被引：56

作者：

He, Jin ^{[1
]}

Zhang, Xing

Zhang, Ganggang

Chan, Mansun

Wang, Yangyuan

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept EEE, Hong Kong, Hong Kong, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 03期

关键词：

non-classical MOSFETs; non-charge-sheet; device physics; compact modeling; surrounding-gate MOSFET; carrier-based model;

D O I：

10.1016/j.sse.2006.01.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A carrier-based analytic DCIV model for the long channel undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of the carrier concentration. From this model, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically and then the predicted DCIV characteristics are compared with the 3D numerical simulations. The analytical results of the model presented also show in a good agreement with the 3D simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any need for the fitting parameter. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：416 / 421

页数：6

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