Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C

被引：16

作者：

Basu, A ^{[1
]}

Mohammed, FM

Guo, S

Peres, B

Adesida, I

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[4] EMCORE Corp, Somerset, NJ 08873 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 02期

关键词：

D O I：

10.1116/1.2178365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-resistance Ohmic contacts on Al0.3Ga0.7N/GaN high electron mobility transistors (HEMTs) were formed with a Mo/Al/Mo/Au metallization scheme which was annealed at a relatively low temperature of 500 degrees C. A contact resistance of 0.11 +/- 0.05 Omega mm and a specific contact resistivity of 2.63 X 10(-7) Omega cm(2) were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date. (c) 2006 American Vacuum Society.

引用

页码：L16 / L18

页数：3

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