Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C

被引：16
作者：
Basu, A [1 ]
Mohammed, FM
Guo, S
Peres, B
Adesida, I
机构：
[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] EMCORE Corp, Somerset, NJ 08873 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 02期
关键词：
D O I：
10.1116/1.2178365
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-resistance Ohmic contacts on Al0.3Ga0.7N/GaN high electron mobility transistors (HEMTs) were formed with a Mo/Al/Mo/Au metallization scheme which was annealed at a relatively low temperature of 500 degrees C. A contact resistance of 0.11 +/- 0.05 Omega mm and a specific contact resistivity of 2.63 X 10(-7) Omega cm(2) were achieved. This represents the best low-temperature-annealed Ohmic contacts on GaN-based HEMTs achieved to date. (c) 2006 American Vacuum Society.
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收藏
页码：L16 / L18
页数：3
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