Laser operation of highly-doped Tm:LiYF4 epitaxies: towards thin-disk lasers

被引:17
|
作者
Soulard, Remi [1 ]
Salhi, Mohamed [1 ]
Brasse, Gurvan [1 ]
Loiko, Pavel [1 ]
Doualan, Jean-Louis [1 ]
Guillemot, Lauren [1 ]
Braud, Alain [1 ]
Tyazhev, Aleksey [2 ]
Hideur, Ammar [2 ]
Camy, Patrice [1 ]
机构
[1] Univ Caen, UMR 6252, CEA CNRS ENSICAEN, Ctr Rech Ions Mat & Photon CIMAP, 6 Blvd Marechal Juin, F-14050 Caen 4, France
[2] Normandie Univ, CNRS, INSA, CORIA UMR6614,Univ Rouen, Ave Univ,BP 12, F-76801 St Etienne Du Rouvray, France
关键词
WAVE-GUIDE LASER; POWER; EFFICIENT; TM3+; HO3+;
D O I
10.1364/OE.27.009287
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Quasi-continuous-wave laser operation of 20 at.1% Tm:LiYF4 thin films (84-240 mu m) grown by Liquid Phase Epitaxy (LPE) on undoped LiYF4 substrates is achieved. The 240 mu m-thick Tm:LiVE4 active layer pumped at 793 nm with a simple double-pass scheme generated 152 mW (average power) at 1.91 mu m with a slope efficiency of 34.4% with respect to the absorbed pump power. A model of highly-doped Tm:LiYF4 lasers accounting for cross relaxation, energy-transfer upconversion and energy migration is developed showing good agreement with the experiment. The pump quantum efficiency for Tm3+ ions is discussed and the energy-transfer parameters are derived. These results show that LPE-grown Tm:LiYF4 thin films are promising for similar to 1.9 mu m thin-disk lasers. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:9287 / 9301
页数:15
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