Chemically Modulated Graphene Diodes

被引：158
作者：
Kim, Hye-Young [1 ]
Lee, Kangho [1 ]
McEvoy, Niall [1 ]
Yim, Chanyoung [1 ,2 ]
Duesberg, Georg S. [1 ]
机构：
[1] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
[2] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
来源：
NANO LETTERS | 2013年 / 13卷 / 05期
关键词：
Graphene Schottky diode; chemical doping of graphene; chemical sensor; ideality factor; Schottky barrier height; GAS; TRANSISTORS; TRANSPORT;
D O I：
10.1021/nl400674k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocompatible sensors.
引用
收藏
页码：2182 / 2188
页数：7
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