Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

被引：104

作者：

Long, Shibing ^{[1
]}

Lian, Xiaojuan ^{[2
]}

Ye, Tianchun ^{[1
]}

Cagli, Carlo ^{[3
]}

Perniola, Luca ^{[3
]}

Miranda, Enrique ^{[2
]}

Liu, Ming ^{[1
]}

Sune, Jordi ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrat, Beijing 100029, Peoples R China

[2] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[3] CEA, LETI, F-38054 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 05期

基金：

中国国家自然科学基金;

关键词：

RESET statistics; resistive random access memory (RRAM); resistive switching (RS);

D O I：

10.1109/LED.2013.2251314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The statistics of the RESET voltage (V-RESET) and the RESET current (I-RESET) of Pt/HfO2/Pt resistive random access memory (RRAM) devices operated under unipolar mode are analyzed. The experimental results show that both the distributions of I-RESET and V-RESET are strongly influenced by the distribution of initial resistance in the ON state (R-ON), which is related to the size of the conductive filament (CF) before RESET. By screening the statistical data into different resistance ranges, both the distributions of I-RESET and V-RESET are shown to be compatible with a Weibull model. Contrary to previous reports for NiO-based RRAM, the Weibull slopes of the I-RESET and V-RESET are demonstrated to be independent of R-ON. This is an indication that the RESET point, defined in this letter as the point of maximum current, corresponds to the initial phase of CF dissolution. On the other hand, given that the scale factor of the V-RESET distribution (V-RESET63%) is roughly independent of R-ON, the scale factor of the I-RESET (I-RESET63%) is inversely proportional to R-ON. This is analogous to what was found in NiO-based RRAM and it is consistent with the thermal dissolution model of RESET. Our results highlight the intrinsic link between the SET and RESET statistics and the need for controlling the variation of ON-state resistance to reduce the variability of the RESET voltage and current.

引用

页码：623 / 625

页数：3

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