Strong Internal and External Luminescence as Solar Cells Approach the Shockley-Queisser Limit

被引:787
作者
Miller, Owen D. [1 ,2 ]
Yablonovitch, Eli [1 ,2 ]
Kurtz, Sarah R. [3 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 03期
基金
美国国家科学基金会;
关键词
External luminescence; GaAs; Shockley-Queisser (SQ) limit; solar cells; AUGER RECOMBINATION; EFFICIENCY; SILICON; EMISSION;
D O I
10.1109/JPHOTOV.2012.2198434
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Absorbed sunlight in a solar cell produces electrons and holes. However, at the open-circuit condition, the carriers have no place to go. They build up in density, and ideally, they emit external luminescence that exactly balances the incoming sunlight. Any additional nonradiative recombination impairs the carrier density buildup, limiting the open-circuit voltage. At open circuit, efficient external luminescence is an indicator of low internal optical losses. Thus, efficient external luminescence is, counterintuitively, a necessity for approaching the Shockley-Queisser (SQ) efficiency limit. A great solar cell also needs to be a great light-emitting diode. Owing to the narrow escape cone for light, efficient external emission requires repeated attempts and demands an internal luminescence efficiency >> 90%.
引用
收藏
页码:303 / 311
页数:9
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