Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

被引：5

作者：

Guduru, Veerendra K. ^{[1
,2
]}

McCollam, A. ^{[1
,2
]}

Maan, J. C. ^{[1
,2
]}

Zeitler, U. ^{[1
,2
]}

Wenderich, S. ^{[3
,4
]}

Kruize, M. K. ^{[3
,4
]}

Brinkman, A. ^{[3
,4
]}

Huijben, M. ^{[3
,4
]}

Koster, G. ^{[3
,4
]}

Blank, D. H. A. ^{[3
,4
]}

Rijnders, G. ^{[3
,4
]}

Hilgenkamp, H. ^{[3
,4
]}

机构：

[1] Radboud Univ Nijmegen, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands

[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands

[3] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 03期

关键词：

SUPERCONDUCTIVITY; COEXISTENCE;

D O I：

10.3938/jkps.63.437

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

引用

页码：437 / 440

页数：4

共 22 条

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