Thermal Characterization of TSV Array as Heat Removal Element in 3D IC Stacking

被引：0

作者：

Zhang, L. ^{[1
]}

Li, H. Y. ^{[1
]}

Lo, G. Q. ^{[1
]}

Tan, C. S.

机构：

[1] ASTAR, Inst Microelect, Singapore, Singapore

来源：

PROCEEDINGS OF THE 2012 IEEE 14TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE | 2012年

关键词：

TSV; thermal characteristics; thermal sensor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through-silicon-via (TSV) as a key enabler for three-dimensional (3D) integration provides electrical connections between stacked functional dies. This work examines the thermal characteristics of the TSV arrays and experimentally demonstrates that TSV arrays embedded in silicon substrate can be utilized as an effective heat removal element that helps in both heat dissipation and management of 3D integration. It is found that the use of appropriate TSV arrays which surround and are placed beneath a temperature sensor has an effective cooling capability as much as 40 degrees C.

引用

页码：153 / 156

页数：4

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