Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT

被引：35

作者：

Hu, Shiben ^{[1
]}

Lu, Kuankuan ^{[1
]}

Ning, Honglong ^{[1
]}

Fang, Zhiqiang ^{[2
]}

Liu, Xianzhe ^{[1
]}

Xie, Weiguang ^{[3
,4
]}

Yao, Rihui ^{[1
]}

Zou, Jianhua ^{[1
]}

Xu, Miao ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, State Key Lab Pulp & Paper Engn, Guangzhou 510640, Guangdong, Peoples R China

[3] Jinan Univ, Dept Phys, Guangzhou Key Lab Vacuum Coating Technol & New En, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China

[4] Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Copper; contact resistance; thin film transistors; ITO; a-IGZO; THIN-FILM TRANSISTORS; DIFFUSION-BARRIER;

D O I：

10.1109/LED.2018.2800725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose a strategy to improve the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) with the copper (Cu) electrodes by depositing a 30-nm thick In-Sn-O (ITO) interlayer on top of IGZO layer to suppress Cu migration. As a result, the a-IGZO TFT with ITO interlayer exhibits enhanced electrical performance (V-TH of 1.5 V, mu(FE) of 11.5 cm(2)/Vs, SS of 0.2 V/dec, I-ON/I-OFF of 2.4 x 10(10), and RCW: 18 cm).

引用

页码：504 / 507

页数：4

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