The strain energy density of cubic epitaxial layers

被引:18
作者
Bottomley, DJ [1 ]
Fons, P [1 ]
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
10.1016/0022-0248(95)00918-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We obtain a compact exact expression for the strain energy density of a cubic epitaxial medium in the limit of linear elasticity theory. Only the result for {001} is identical to the isotropic case: the greatest departure from isotropic theory occurs for {111}. We have evaluated this difference for a large number of cubic media and have obtained an estimate of its impact on epilayer critical thickness t(c) for [001] oriented growth. We suggest that it tends to lower t(c) for [001] oriented growth relative to that given by isotropic theory: by 15%-30% for common semiconductors and by up to a factor of 3 for metals.
引用
收藏
页码:406 / 412
页数:7
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