The role of cobalt doping on the optical and structural properties of Mn3O4 nanostructured thin films obtained by SILAR technique

被引:20
作者
Bayram, Ozkan [1 ,2 ]
Igman, Erdal [3 ]
Guney, Harun [4 ]
Simsek, Onder [2 ,4 ]
机构
[1] Bayburt Univ, Dept Mat Sci & Nanotechnol Engn, Engn Fac, TR-69100 Bayburt, Turkey
[2] Ataturk Univ, Kazan Karabekir Educ Fac, Dept Phys Educ, TR-25240 Erzurum, Turkey
[3] Ataturk Univ, Grad Sch Nat & Apply Sci, Dept Nanosci & Nanoengn, TR-25240 Erzurum, Turkey
[4] Ibrahim Cecen Univ Agri, Cent Applicat & Res Lab MERLAB, TR-25240 Agri, Turkey
关键词
SILAR; Doping effect; Hausmannite; RAMAN; Semiconductors; ELECTRICAL-PROPERTIES; OXIDE NANOPARTICLES; THERMAL-DECOMPOSITION; ELECTRONIC-STRUCTURE; MANGANESE OXIDES; SUPERCAPACITOR; PERFORMANCE; CATALYST; OXIDATION; PRECURSOR;
D O I
10.1016/j.spmi.2019.01.025
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Cobalt doped manganese oxide thin films (Mn3O4:Co) were successfully deposited on soda lime glass substrates using SILAR technique. Mn3O4:Co thin films were characterized using XRD, SEM, Uv-VIS and Raman spectroscopy. The XRD spectra showed that thin films had substantially Hausmannite crystal structure. The preferential orientation of the pure and 0.5 at.% Co doped manganese oxide thin films ( Mn3O4) was (002), but with increasing Co doping, it was detected that this preferential orientation shift towards the (211) plane. The absorbance, transmittance and optical band gap of the Mn3O4:Co thin films were determined using Uv-Vis spectroscopy and these properties of the thin films differed considerably due to cobalt doping. The optical band gap of pure Mn3O4 thin films was 2.00 eV, but on the other hand, due to the Co doping this value increased before and then decreased slightly. Optical transmittance of Mn3O4:Co films increased from 60% to 72% with the effect of Co doping. A1 g mode, which is the characteristic vibration peak of Mn3O4 films, was confirmed for pure and doped Mn(3)O(4 )thin films at a wavelength of 658 nm.
引用
收藏
页码:212 / 220
页数:9
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