Impact of forming gas annealing on the dielectric properties of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

被引：6

作者：

Wang, Dong-Sheng ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Dept Appl Phys, Nanjing 210016, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 08期

关键词：

HYDROGEN-INDUCED DEGRADATION; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; CAPACITORS; DEPOSITION; TITANATE;

D O I：

10.1063/1.4761991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrBi2Ta2O9 (SBT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by metalorganic decomposition method. The dielectric properties of SBT films strongly depend on annealing conditions and annealing time. Compared with films not annealed in forming gas, the relative dielectric constant and the dissipation factor for SBT films annealed at 400 degrees C decrease by 23.4% and 30.6%, respectively. It implies that the dominant dielectric loss mechanism is related to the degradation of films. Forming gas ambient may have played an important role in the increase of oxygen vacancies in SBT thin films and the degradation of dielectric properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4761991]

引用

页数：6

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