Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

被引：101
作者：
Hu, Jia-Mian [1 ,2 ]
Li, Zheng [1 ,2 ]
Chen, Long-Qing [3 ]
Nan, Ce-Wen [1 ,2 ]
机构：
[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 21期
基金：
美国国家科学基金会;
关键词：
multiferroic heterostructures; magnetic memory; magnetoelectric materials; phase-field methods; domain switching dynamics; ROOM-TEMPERATURE; FERROELECTRIC CONTROL; DOMAIN-STRUCTURES; THIN-FILMS; FIELD; HETEROSTRUCTURES; EVOLUTION; OXIDES;
D O I：
10.1002/adma.201201004
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2869 / 2873
页数：5
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