Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

被引：106

作者：

Lee, Sang Woon ^{[1
,2
]}

Kwon, Oh Seong ^{[3
]}

Han, Jeong Hwan ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Samsung Elect Co, Proc Dev Team, Yongin 449711, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

Annealing - Perovskite - Thin films - Leakage currents - Random access storage - High temperature applications - Perovskite solar cells - Strontium titanates;

D O I：

10.1063/1.2939102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 (STO) thin films were deposited at 370 degrees C by atomic layer deposition using H2O as the oxidant, and Ti(O-iPr)(2)(thd)(2) and Sr(thd)(2) as Ti, and Sr precursors, respectively. Denser STO films were produced at this deposition temperature. The saturated growth rate was 0.15 angstrom/cycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A t(ox) of 0.72 nm (dielectric constant of 108) and a low leakage current density (similar to 10(-7)A/cm(2) at 0.8 V) were obtained from a planar capacitor structure consisting of Pt/20-nm-thick STO/Ru (bottom). (c) 2008 American Institute of Physics.

引用

页数：3

共 8 条

[1] Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes [J].

Ahn, Ji-Hoon ;

Kim, Ja-Yong ;

Kang, Sang-Won .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[2] Preparation and electrical properties of SrTiO3 thin films deposited by liquid source metal-organic chemical vapor deposition (MOCVD) [J].

Kang, CS ;

Hwang, CS ;

Cho, HJ ;

Lee, BT ;

Park, SO ;

Kim, JW ;

Horii, H ;

Lee, SI ;

Koh, YB ;

Lee, MY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :4890-4895

[3] Effect of annealing in processing of strontium titanate thin films by ALD [J].

Kosola, A ;

Putkonen, M ;

Johansson, LS ;

Niinistö, L .

APPLIED SURFACE SCIENCE, 2003, 211 (1-4) :102-112

[4] Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O [J].

Kwon, Oh Seong ;

Lee, Sang Woon ;

Han, Jeong Hwan ;

Hwang, Cheol Seong .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (06) :G127-G133

[5] Chemically conformal ALD of SrTiO3 thin films using conventional metallorganic precursors [J].

Kwon, OS ;

Kim, SK ;

Cho, M ;

Hwang, CS ;

Jeong, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (04) :C229-C236

[6]

Vehkamäki M, 2001, CHEM VAPOR DEPOS, V7, P75, DOI 10.1002/1521-3862(200103)7:2<75::AID-CVDE75>3.0.CO

[7]

2-B

[8] Liquid injection atomic layer deposition of TiOx films using Ti[OCH(CH3)2]4 [J].

Watanabe, Takayuki ;

Hoffmann-Eifert, Susanne ;

Yang, Lin ;

Ruediger, Andreas ;

Kuegeler, Carsten ;

Hwang, Cheol Seong ;

Waser, Rainer .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (06) :G134-G140

← 1 →