Analog and Mixed-Signal Millimeter-Wave SiGe BiCMOS Circuits: State of the Art and Future Scaling

被引:0
作者
Voinigescu, Sorin P. [1 ]
Shopov, Stefan [1 ]
Hoffman, James [1 ]
Vasilakopoulos, Konstantinos [1 ]
机构
[1] Univ Toronto, ECE Dept, Toronto, ON M5S 3G4, Canada
来源
2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2016年
关键词
analog front-end; digital-to-analog converter; driver; fiber-optic transceivers; mm-wave radio; transimpedance amplifier; track-and-hold amplifier;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews recent work on 100+Gb/s SiGe BiCMOS circuits and system architectures for future wireless backhaul and 1Tb/s fiber-optics systems, and explores technology requirements and benchmark circuit scaling in future SiGe BiCMOS nodes for these applications. Among the circuits discussed are a 240GHz signal source with over 7dBm output power, a 108GS/s track and hold amplifier, 120Gb/s TIA, 135GHz bandwidth linear low-noise amplifier, 80GHz bandwidth linear distributed driver with over 6V(PP) output swing, and a proof-of-concept 120GS/s power-DAC test vehicle with 6V(PP) differential output swing.
引用
收藏
页码:78 / 81
页数:4
相关论文
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