Wet etching of AlGaN/GaN photocathode grown by MOCVD

被引:1
作者
Hao, Guanghui [1 ,2 ]
Chang, Benkang [2 ]
Cheng, Hongchang [1 ]
机构
[1] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Peoples R China
[2] Nanjing Univ Sci & Technol, Dept Opt Engn, Nanjing, Jiangsu 210094, Peoples R China
来源
INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: LOW-LIGHT-LEVEL TECHNOLOGY AND APPLICATIONS | 2013年 / 8912卷
关键词
AlGaN/GaN photocathode; molten KOH; reflectivity and transmittance; spectral response;
D O I
10.1117/12.2034325
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The AlGaN/GaN with thin GaN surface was grown by metalorganic chemical vapor deposition (MOCVD). One of two AlGaN/GaN photocathode samples was etched by molten KOH about 40s, and its reflectivity and transmittance are tested. The thickness of AlGaN and GaN layers are fitted by the matrix formula for thin film optics, in which the GaN thickness of them are 7nm and 2.5nm respectively, and got the etch speed of GaN. Then the etched and original AlGaN/GaN photocathode samples are activated by Cs/O in the same way. The spectral response and the result of simulation show that the cut-off wavelength of the etched AlGaN/GaN deviate to the short-wave, and the quantum efficiency decline with the GaN thickness decrease.
引用
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页数:6
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