Design of Driving Transistor in a-Si:H TFT Gate Driver Circuit

被引：0
|
作者：
Zheng, Can [1 ]
Liao, Congwei [1 ]
Li, Jianhua [1 ]
Zhang, Shengdong [1 ]
机构：
[1] Peking Univ, Key Lab TFT & Adv Display, Shenzhen 518055, Peoples R China
来源：
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年
关键词：
a-Si:H TFT; gate driver circuit; driving transistor; parasitic capacitance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The driving transistor in a-Si:H gate driver circuits is studied systematically for the first time. A viable device layout for the driving device is proposed and investigated. The dependence of the circuit performance on the driving device dimension is analyzed in detail.
引用
收藏
页数：2
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