Low-temperature growth of AIN thin films by plasma-enhanced atomic layer deposition

被引：4

作者：

Feng Jia-Heng ^{[1
,2
]}

Tang Li-Dan ^{[1
]}

Liu Bang-Wu ^{[2
]}

Xia Yang ^{[2
]}

Wang Bing ^{[1
]}

机构：

[1] Liaoning Univ Technol, Jinzhou 121001, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 11期

基金：

中国国家自然科学基金;

关键词：

AN; plasma-enhanced atomic layer deposition; low-temperature growth; crystalline film;

D O I：

10.7498/aps.62.117302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The crystalline AN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AN thin film is 200 C, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al-2p and N-1s spectra confirm the presence of AN with peaks located at 74.1 eV and 397.0 eV, respectively.

引用

页数：6

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