Electrical control of optical properties of monolayer MoS2

被引：192

作者：

Newaz, A. K. M. ^{[1
]}

Prasai, D. ^{[2
]}

Ziegler, J. I. ^{[1
]}

Caudel, D. ^{[1
,3
]}

Robinson, S. ^{[4
]}

Haglund, R. F., Jr. ^{[1
,2
]}

Bolotin, K. I. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Interdisciplinary Grad Program Mat Sci, Nashville, TN 37234 USA

[3] Fisk Univ, Dept Phys, Nashville, TN 37208 USA

[4] Belmont Univ, Dept Chem & Phys, Nashville, TN 37212 USA

来源：

SOLID STATE COMMUNICATIONS | 2013年 / 155卷

基金：

美国国家科学基金会;

关键词：

Molybdenum disulfide; Nanofabrication; Electronic transport; QUANTUM-WELL STRUCTURES; PHOTOLUMINESCENCE; SPECTROSCOPY;

D O I：

10.1016/j.ssc.2012.11.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS2) configured in field effect transistor geometry. We observe a hundredfold increase in photoluminescence intensity and an increase in absorption at similar to 660 nm in these devices when an external gate voltage is decreased from +50 to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS2 devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS2 with charge carriers. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：49 / 52

页数：4

共 24 条

[1]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]

[2] Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 [J].

Cheiwchanchamnangij, Tawinan ;

Lambrecht, Walter R. L. .

PHYSICAL REVIEW B, 2012, 85 (20)

[3] Photoluminescence from Chemically Exfoliated MoS2 [J].

Eda, Goki ;

Yamaguchi, Hisato ;

Voiry, Damien ;

Fujita, Takeshi ;

Chen, Mingwei ;

Chhowalla, Manish .

NANO LETTERS, 2011, 11 (12) :5111-5116

[4] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION [J].

FINKELSTEIN, G ;

SHTRIKMAN, H ;

BARJOSEPH, I .

PHYSICAL REVIEW LETTERS, 1995, 74 (06) :976-979

[5]

Forker R, 2012, ANNU REP PROG CHEM C, V108, P34, DOI 10.1039/c2pc90002e

[6] Low-temperature photocarrier dynamics in monolayer MoS2 [J].

Korn, T. ;

Heydrich, S. ;

Hirmer, M. ;

Schmutzler, J. ;

Schueller, C. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[7] Strong quantum-confined Stark effect in germanium quantum-well structures on silicon [J].

Kuo, YH ;

Lee, YK ;

Ge, YS ;

Ren, S ;

Roth, JE ;

Kamins, TI ;

Miller, DAB ;

Harris, JS .

NATURE, 2005, 437 (7063) :1334-1336

[8] Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].

Lee, Changgu ;

Yan, Hugen ;

Brus, Louis E. ;

Heinz, Tony F. ;

Hone, James ;

Ryu, Sunmin .

ACS NANO, 2010, 4 (05) :2695-2700

[9] Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition [J].

Lee, Yi-Hsien ;

Zhang, Xin-Quan ;

Zhang, Wenjing ;

Chang, Mu-Tung ;

Lin, Cheng-Te ;

Chang, Kai-Di ;

Yu, Ya-Chu ;

Wang, Jacob Tse-Wei ;

Chang, Chia-Seng ;

Li, Lain-Jong ;

Lin, Tsung-Wu .

ADVANCED MATERIALS, 2012, 24 (17) :2320-2325

[10] A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor [J].

Liu, AS ;

Jones, R ;

Liao, L ;

Samara-Rubio, D ;

Rubin, D ;

Cohen, O ;

Nicolaescu, R ;

Paniccia, M .

NATURE, 2004, 427 (6975) :615-618

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