An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors

被引:1
作者
Hu, Yu [1 ,2 ]
Joo, Ji-Eun [1 ,2 ]
Lee, Myung-Jae [3 ]
Park, Sung Min [1 ,2 ,3 ]
机构
[1] Ewha Womans Univ, Dept Elect & Elect Eng, Seoul, South Korea
[2] Ewha Womans Univ, Grad Program Smart Factory, Seoul, South Korea
[3] Post Silicon Semicond Inst, Korea Inst Sci & Technol, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
CMOS; cross-coupled; feedforward; optoelectronic; TIA; FRONT-END CIRCUIT;
D O I
10.5573/JSTS.2022.22.4.275
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+/N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBO transimpedance gain, 608-MHz bandwidth, 4.54pA/vHz noise current spectral density, 26.4- dB dynamic range that corresponds to the input currents of 2.38 mu App similar to 50 mu App, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2.
引用
收藏
页码:275 / 281
页数:7
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