High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

被引：17
作者：
Yu, SJ
Hsu, WC
Chen, YJ
Wu, CL
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Transcom Inc, Tainan 744, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 02期
关键词：
metamorphic; breakdown; In0.35Al0.65As/In0.35Ga0.65As MHEMT;
D O I：
10.1016/j.sse.2005.12.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
delta-Doped In0.35Al0.65As/In0.35Ga0.65As metamorphic high electron mobility transistor (MHEMT) grown by molecular beam epitaxy (MBE) has been successfully investigated. High power characteristic are achieved due to the improved impact ionization and kink effects within the channel by bandgap engineering. This work demonstrates distinguished device characteristics, including superior breakdown performance (BVGD = -15.2 V and BVoff = 14.1 V), high small-signal gain (G(s) = 22.7 dB), high microwave output power (P-out = 14.1 dB m at 2.4 GHz), and low minimum noise figure (NFmin = 1.1 dB). In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the studied metamorphic HEMT. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：291 / 296
页数：6
相关论文
共 17 条
[1]   OFF-STATE BREAKDOWN IN INALAS/INGAAS MODFETS [J].
BAHL, SR ;
DELALAMO, JA ;
DICKMANN, J ;
SCHILDBERG, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (01) :15-22
[2]   HIGH-FREQUENCY EQUIVALENT-CIRCUIT OF GAAS-FETS FOR LARGE-SIGNAL APPLICATIONS [J].
BERROTH, M ;
BOSCH, R .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (02) :224-229
[3]   0.06μm gate length metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs with high fT and fMAX [J].
Bollaert, S ;
Cordier, Y ;
Zaknoune, M ;
Happy, H ;
Lepilliet, S ;
Cappy, A .
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, :192-195
[4]   Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT:: Modeling and measurements [J].
Boudrissa, M ;
Delos, E ;
Gaquiere, C ;
Rousseau, M ;
Cordier, Y ;
Theron, D ;
De Jaeger, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1037-1044
[5]   Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor [J].
Chen, YW ;
Chen, YJ ;
Hsu, WC ;
Hsu, RT ;
Wu, YH ;
Lin, YS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03) :974-976
[6]   Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels [J].
Chen, YW ;
Hsu, WC ;
Hsu, RT ;
Wu, YH ;
Chen, YJ .
SOLID-STATE ELECTRONICS, 2004, 48 (01) :119-124
[7]   A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].
DAMBRINE, G ;
CAPPY, A ;
HELIODORE, F ;
PLAYEZ, E .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159
[8]   BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS/INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE [J].
DICKMANN, J ;
SCHILDBERG, S ;
RIEPE, K ;
MAILE, BE ;
SCHURR, A ;
GEYER, A ;
NAROZNY, P .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01) :66-71
[9]   High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates [J].
Dumka, DC ;
Hoke, WE ;
Lemonias, PJ ;
Cueva, G ;
Adesida, I .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :364-366
[10]  
HSU WC, 2005, IEEE T ELECTRON DEV, V56, P6
12