Approaching single-junction theoretical limit using ultra-thin GaAs solar cells with optimal optical designs

被引:0
|
作者
Liu, Shi [1 ]
Ding, Ding
Johnson, Shane R.
Zhang, Yong-Hang
机构
[1] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA
来源
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年
基金
美国国家科学基金会;
关键词
absorption; gallium arsenide; optical design; photovoltaic cells; surface roughness; EPITAXIAL LIFT-OFF; EFFICIENCY;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Single-junction GaAs solar cells have been studied extensively recently, and have reached over 28% efficiency. Further improvement requires an optically thick but physically thin absorbing layer to provide not only high open-circuit voltage but also large short-circuit current. This paper studies various optical designs, such as light scattering and reflection at various surfaces. It is concluded that thin GaAs solar cells with hundreds of nanometers thickness and the combination of textured surfaces and reflective back surfaces can potentially offer efficiencies greater than 30% under one sun AM1.5G solar spectrum. A practical approach is proposed to realize these structures by roughening a lattice-matched ZnSe layer grown on the device. The achievable efficiencies of all these structures are discussed.
引用
收藏
页码:2082 / 2087
页数:6
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