Optical response of extended systems from time-dependent Hartree-Fock and time-dependent density-functional theory

被引:12
作者
Bernasconi, Leonardo [1 ]
Webster, Ross [2 ]
Tomic, Stanko [3 ]
Harrison, Nicholas M. [1 ,2 ]
机构
[1] STFC Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
[2] Imperial Coll London, Dept Chem, London SW7 2AZ, England
[3] Univ Salford, Joule Phys Lab, Manchester M5 4WT, Lancs, England
来源
3RD WORKSHOP ON THEORY, MODELLING AND COMPUTATIONAL METHODS FOR SEMICONDUCTORS (TMCSIII) | 2012年 / 367卷
关键词
CHARGE-TRANSFER; EXCITATION-ENERGIES; EXCITED-STATES; AB-INITIO; ELECTRONIC EXCITATIONS; EXCHANGE; CRYSTAL; POLARIZABILITIES; IMPLEMENTATION; HYPERPOLARIZABILITIES;
D O I
10.1088/1742-6596/367/1/012001
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe a unified formulation of time-dependent Hartree-Fock (TD-HF) and time-dependent density-functional theory (TD-DFT) for the accurate and efficient calculation of the optical response of infinite (periodic) systems. The method is formulated within the linear-response approximation, but it can easily be extended to include higher-order response contributions, and, in TD-DFT, it can treat with comparable computational efficiency purely local, semi-local or fully non-local approximations for the ground-state exchange-correlation (XC) functional and for the response TD-DFT XC kernel in the adiabatic approximation. At variance with existing methods for computing excitation energies based on the diagonalisation of suitable coupling matrices, or on the inversion of a dielectric matrix, our approach exploits an iterative procedure similar to a standard self-consistent field calculation. This results in a particularly efficient treatment of the coupling of excitations at different k points in the Brillouin zone. As a consequence, our method has the potential to describe completely from first principles the optically induced formation of bound particle-hole pairs in wide classes of materials. This point is illustrated by computing the optical gaps of a series of representative bulk semiconductors, (non-spin polarised) oxides and ionic insulators.
引用
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页数:12
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