Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements

被引：34

作者：

Chang, L-T ^{[1
]}

Han, W. ^{[2
]}

Zhou, Y. ^{[1
]}

Tang, J. ^{[1
]}

Fischer, I. A. ^{[3
]}

Oehme, M. ^{[3
]}

Schulze, J. ^{[3
]}

Kawakami, R. K. ^{[2
]}

Wang, K. L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[3] Univ Stuttgart, Inst Halbleitertech IHT, D-70569 Stuttgart, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

关键词：

MOLECULAR-BEAM EPITAXY; ELECTRICAL DETECTION; ROOM-TEMPERATURE; SILICON; INJECTION; TRANSPORT; GERMANIUM;

D O I：

10.1088/0268-1242/28/1/015018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compared the temperature dependence of spin lifetime in n-Ge characterized from three-terminal (3T) and four-terminal (4T) Hanle measurements using single-crystalline Fe/MgO/n-Ge tunnel junctions. The bias conditions of the two schemes were chosen to be about the same in order to compare the spin lifetimes (tau(3T) and tau(4T)). The temperature dependences of tau(3T) and tau(4T) behave in a very similar way at the low temperature region (T <= 10 K), and both tau(3T) and tau(4T) decrease as the temperature increases, which is consistent with the dominating Elliot-Yafet spin relaxation mechanism in bulk Ge. However, when the temperature is higher than 10 K, tau(4T) is longer than tau(3T), which may be explained by the fact that 3T Hanle measurements are more easily affected by additional scattering effects caused by the accompanied charge current and electric field in the 3T geometry.

引用

页数：7

共 37 条

[31] Spin transport in germanium at room temperature [J].

Shen, C. ;

Trypiniotis, T. ;

Lee, K. Y. ;

Holmes, S. N. ;

Mansell, R. ;

Husain, M. ;

Shah, V. ;

Li, X. V. ;

Kurebayashi, H. ;

Farrer, I. ;

de Groot, C. H. ;

Leadley, D. R. ;

Bell, G. ;

Parker, E. H. C. ;

Whall, T. ;

Ritchie, D. A. ;

Barnes, C. H. W. .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[32] Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor (vol 102, 036601, 2009) [J].

Tran, M. ;

Jaffres, H. ;

Deranlot, C. ;

George, J. -M. ;

Fert, A. ;

Miard, A. ;

Lemaitre, A. .

PHYSICAL REVIEW LETTERS, 2011, 107 (24)

[33] Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor [J].

Tran, M. ;

Jaffres, H. ;

Deranlot, C. ;

George, J. -M. ;

Fert, A. ;

Miard, A. ;

Lemaitre, A. .

PHYSICAL REVIEW LETTERS, 2009, 102 (03)

[34] Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry [J].

van't Erve, O. M. J. ;

Hanbicki, A. T. ;

Holub, M. ;

Li, C. H. ;

Awo-Affouda, C. ;

Thompson, P. E. ;

Jonker, B. T. .

APPLIED PHYSICS LETTERS, 2007, 91 (21)

[35] Spintronics:: A spin-based electronics vision for the future [J].

Wolf, SA ;

Awschalom, DD ;

Buhrman, RA ;

Daughton, JM ;

von Molnár, S ;

Roukes, ML ;

Chtchelkanova, AY ;

Treger, DM .

SCIENCE, 2001, 294 (5546) :1488-1495

[36]

Yafet Y., 1963, Solid State Physics: g Factors and spin-lattice relaxation of conduction electrons

[37] Electrical spin injection and transport in germanium [J].

Zhou, Yi ;

Han, Wei ;

Chang, Li-Te ;

Xiu, Faxian ;

Wang, Minsheng ;

Oehme, Michael ;

Fischer, Inga A. ;

Schulze, Joerg ;

Kawakami, Roland. K. ;

Wang, Kang L. .

PHYSICAL REVIEW B, 2011, 84 (12)

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