Unipolar resistive switching in sol-gel synthesized strontium titanate thin films

被引：9
作者：
Thakre, Atul [1 ,2 ]
Kumar, Ashok [1 ,2 ]
机构：
[1] Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab Campus,Dr KS Krishnan Marg, New Delhi 110012, India
[2] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
来源：
VACUUM | 2018年 / 151卷
关键词：
MEMORY;
D O I：
10.1016/j.vacuum.2018.02.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report repeatable and robust unipolar resistive switching (URS) in strontium titanate (SrTiO3 similar to STO) thin films fabricated on conducting ITO coated glass substrate. The Atomic Force Microscopy (AFM) image of the top surface of the films suggests very smooth surface over a large area. The conduction mechanisms responsible for the resistive switching phenomenon were also thoroughly analyzed by current-voltage and impedance spectroscopy analysis. Frequency-dependent various impedance parameters were analyzed for each resistive states (high resistance state (HRS) and low resistive state (LRS)). The oxygen vacancies may be one of the dominating factors for robust URS phenomenon in the device. The presented Au/STO/ITO memory devices have exhibited long retention characteristics of >10(4) s and OFF/ON resistance ratio of >10(3) with a distinguishable SET and RESET voltage window of similar to 1 V. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：182 / 184
页数：3
相关论文
共 12 条
[1]  
Cavin Ralph K., 2012, P IEEE, V100
[2]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[3]   CMOS compatible nanoscale nonvolatile resistance, switching memory [J].
Jo, Sung Hyun ;
Lu, Wei .
NANO LETTERS, 2008, 8 (02) :392-397
[4]   Multilevel resistive memory switching in graphene sandwiched organic polymer heterostructure [J].
Khurana, Geetika ;
Misra, Pankaj ;
Katiyar, Ram S. .
CARBON, 2014, 76 :341-347
[5]   Beyond Moore's law. The interconnect era [J].
Meindl, JD .
COMPUTING IN SCIENCE & ENGINEERING, 2003, 5 (01) :20-24
[6]   FeRAM technology for high density applications [J].
Mikolajick, T ;
Dehm, C ;
Hartner, W ;
Kasko, I ;
Kastner, MJ ;
Nagel, N ;
Moert, M ;
Mazure, C .
MICROELECTRONICS RELIABILITY, 2001, 41 (07) :947-950
[7]   Nanoscale resistive switching in SrTiO3 thin films [J].
Szot, K. ;
Dittmann, R. ;
Speier, W. ;
Waser, R. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (02) :R86-R88
[8]  
Tehrani S., 1996, IEDM INT ELECT DEVIC, P193, DOI DOI 10.1109/IEDM.1996.553152
[9]   Unipolar resistive switching behavior in sol-gel synthesized FeSrTiO3 thin films [J].
Thakre, Atul ;
Kaswan, Jyoti ;
Shukla, A. K. ;
Kumar, Ashok .
RSC ADVANCES, 2017, 7 (85) :54111-54116
[10]   Nanoionics-based resistive switching memories [J].
Waser, RaineR ;
Aono, Masakazu .
NATURE MATERIALS, 2007, 6 (11) :833-840
12