High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

被引：88
作者：
Liu, HC
Li, JM
Buchanan, M
Wasilewski, ZR
机构：
[1] Inst. for Microstructural Sciences, National Research Council, Ottawa
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 06期
关键词：
D O I：
10.1109/3.502380
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Angstrom and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps.
引用
收藏
页码：1024 / 1028
页数：5
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