High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

被引：88

作者：

Liu, HC

Li, JM

Buchanan, M

Wasilewski, ZR

机构：

[1] Inst. for Microstructural Sciences, National Research Council, Ottawa

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 06期

关键词：

D O I：

10.1109/3.502380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Angstrom and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps.

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页码：1024 / 1028

页数：5

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