Fundamental Role of the H-Bond Interaction in the Dissociation of NH3 on Si(001)-(2 x 1)

被引：9

作者：

Satta, Mauro ^{[1
]}

Flammini, Roberto ^{[2
]}

Goldoni, Andrea ^{[3
]}

Baraldi, Alessandro ^{[4
,5
]}

Lizzit, Silvano ^{[3
]}

Larciprete, Rosanna ^{[6
]}

机构：

[1] Univ Roma La Sapienza, CNR ISMN, Ist Studio Mat Nanostrut, Dipartimento Chim, I-00185 Rome, Italy

[2] Ist Metodol Inorgan & Plasmi, CNR IMIP, I-00019 Rome, Italy

[3] Sincrotrone Trieste SCpA, AREA Sci Pk, I-34012 Trieste, Italy

[4] Univ Trieste, Dept Phys, I-34127 Trieste, Italy

[5] IOM CNR, Lab TASC, AREA Sci Pk, I-34012 Trieste, Italy

[6] CNR ISC, Ist Sistemi Complessi, I-00133 Rome, Italy

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 03期

关键词：

AB-INITIO; ADSORPTION; SI(100); 1ST-PRINCIPLES; DECOMPOSITION; SURFACES;

D O I：

10.1103/PhysRevLett.109.036102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Further insight into the dissociative adsorption of NH3 on Si(001) has been obtained using a combined computational and experimental approach. A novel route leading to the dissociation of the chemisorbed NH3 is proposed, based on H-bonding interactions between the gas phase and the chemisorbed NH3 molecules. Our model, complemented by synchrotron radiation photoelectron spectroscopy measurements, demonstrates that the low temperature dissociation of molecular chemisorbed NH3 is driven by the continuous flux of ammonia molecules from the gas phase.

引用

页数：5

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