High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin AlOX Interfacial Layer

被引：21
作者：
Xu, Meili [1 ]
Guo, Shuxu [1 ]
Xiang, Lanyi [1 ]
Xu, Ting [1 ]
Xie, Wenfa [1 ]
Wang, Wei [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Ferroelectric memory; flexible nonvolatile memory (NVM); high mobility; organic field-effect transistor memory; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; PERFORMANCE; NANOWIRE; BEHAVIOR; BLENDS;
D O I：
10.1109/TED.2018.2797936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low mobility is a primary issue to prevent the practical application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatilememory (NVM). In this paper, we propose a route to resolve this issue by inserting an ultrathin AlOX layer between the semiconductor film and the ferroelectric polymer film. A high mobility of 6.5 cm(2).V-1.s(-1) is achieved in the fabricated flexible Fe-OFET NVM, which also exhibits good memory performances with a large memory window of 17.2 V, a high memory on-off ratio up to 2 x 10(5), reliable switching endurance property over 600 cycles, and stable retention capability with the memory on-off ratio larger than 10(2) over 10(4) s, at the low programming/erasing voltages of +/- 15 V.
引用
收藏
页码：1113 / 1118
页数：6
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