High mobility III-V MOSFETs for RF and digital applications

被引：91

作者：

Passlack, M. ^{[1
]}

Zurcher, P. ^{[1
]}

Rajagopalan, K. ^{[1
]}

Droopad, R. ^{[1
]}

Abrokwah, J. ^{[1
]}

Tutt, M. ^{[1
]}

Park, Y. -B. ^{[1
]}

Johnson, E. ^{[1
]}

Hartin, O. ^{[1
]}

Zlotnicka, A. ^{[1
]}

Fejes, P. ^{[1
]}

Hill, R. J. W. ^{[2
]}

Moran, D. A. J. ^{[2
]}

Li, X. ^{[2
]}

Zhou, H. ^{[2
]}

Macintyre, D. ^{[2
]}

Thoms, S. ^{[2
]}

Asenov, A. ^{[2
]}

Kalna, K. ^{[2
]}

Thayne, I. G. ^{[2
]}

机构：

[1] Freescale Semicond Inc, 2100 E Elliot Rd, Tempe, AZ 85284 USA

[2] Univ Glasgow, Nanoelect Res Ctr, Glasgow G12 8QQ, Lanark, Scotland

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications.

引用

页码：621 / +

页数：2

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