THE RENASCENCE OF ZnO - PROPERTIES AND APPLICATIONS

被引:1
作者
Dimova-Malinovska, D. [1 ]
机构
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
来源
NANOSTRUCTURED MATERIALS FOR ADVANCED TECHNOLOGICAL APPLICATIONS | 2009年
关键词
ZnO; XRD; optical band gap; Urbach energy; gas sensing; nanowires; HYDROGENATED AMORPHOUS-SILICON; THIN-FILMS; OPTICAL-PROPERTIES; AL; TEMPERATURE; SENSOR; NH3;
D O I
10.1007/978-1-4020-9916-8_31
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO is a material widely Used in industry for decades, which experiences a scientific and technical renascence in the last few years. ZnO is a wide band gap semiconductor (3.37 eV at room temperature) with direct electronic transitions, a large exciton energy (60 meV) and hexagonal close-packed structure (wurtzite). Its Unique chemical, surface and nanoscale properties give opportunities to find different new applications of ZnO in optoelectronics, planar optical waveguides, bio-application etc. It also defines application of ZnO as a transparent conducting electrode for photovoltaics (solar cells) and light emitting diodes, and also as phosphorescent and luminescent material in the visible (blue-green) and Ultraviolet regions. Recently it attracted considerable attention for gas sensors and antibacterial applications, as it withstands harsh process conditions and is a material safe to human beings and animals. In this contribution the structural and optical properties of nanocrystalline ZnO films deposited by magnetron sputtering are presented and analysed in dependence of the deposition conditions and doping. The sensitivity of undoped and doped ZnO films to ammonia at room temperature is compared and discussed.
引用
收藏
页码:285 / 301
页数:17
相关论文
共 30 条
[1]   A highly selective ammonia gas sensor using surface-ruthenated zinc oxide [J].
Aslam, M ;
Chaudhary, VA ;
Mulla, IS ;
Sainkar, SR ;
Mandale, AB ;
Belhekar, AA ;
Vijayamohanan, K .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 75 (02) :162-167
[2]   Spatial confinement of laser light in active random media [J].
Cao, H ;
Xu, JY ;
Zhang, DZ ;
Chang, SH ;
Ho, ST ;
Seelig, EW ;
Liu, X ;
Chang, RPH .
PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5584-5587
[3]   Optical properties of indium-doped ZnO films [J].
Cao, YG ;
Miao, L ;
Tanemura, S ;
Tanemura, M ;
Kuno, Y ;
Hayashi, Y ;
Mori, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A) :1623-1628
[4]   Modifications of the optical and structural properties of hydrogenated amorphous silicon by alloying with germanium and carbon [J].
Dimova-Malinoska, D ;
Nedialkova, L ;
Tzolov, M ;
Tzenov, N .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 53 (3-4) :333-339
[5]   Electrical and optical properties of ZnO thin films prepared by magnetron rf sputtering - influence of Al, Er and H [J].
Dimova-Malinovska, D. ;
Nichev, H. ;
Angelov, O. ;
Grigorov, V. ;
Kamenova, A. .
SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) :123-128
[6]  
Dimova-Malinovska D, 2007, J OPTOELECTRON ADV M, V9, P248
[7]  
Dimova-Malinovska D, 1999, EUR MAT RES, V77, P207
[8]   Optical and electrical properties of RF magnetron sputtered ZnO:Al thin films [J].
Dimova-Malinovska, D ;
Tzenov, N ;
Tzolov, M ;
Vassilev, L .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 52 (01) :59-62
[9]  
DIMOVAMALINOVSK.D, 1974, THESIS U MOSCOW
[10]  
DIMOVAMALINOVSK.D, UNPUB