Internal dielectronic excitation in highly charged ions colliding with surfaces

被引:28
作者
Machicoane, GA [1 ]
Schenkel, T
Niedermayr, TR
Newmann, MW
Hamza, AV
Barnes, AV
McDonald, JW
Tanis, JA
Schneider, DH
机构
[1] Lawrence Livermore Natl Lab, Phys & space Technol Directorate, Livermore, CA 94550 USA
[2] Univ Paris 06, Equipe Rech Ion Surface, F-75005 Paris, France
[3] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[4] Western Michigan Univ, Dept Phys, Kalamazoo, MI 49008 USA
来源
PHYSICAL REVIEW A | 2002年 / 65卷 / 04期
关键词
D O I
10.1103/PhysRevA.65.042903
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Internal dielectronic excitation (IDE) is a correlated atomic physics process that takes place when the deexcitation of a Rydberg electron is accompanied by the excitation of a more tightly bound electron, resulting in a doubly excited inner-shell configuration. Subsequent x-ray emission involving an electron transition to a shell that initially contained no vacancies identifies the IDE process. IDE is mediated by the electron-electron interaction in a manner similar to a time-reversed Auger transition, and can occur during the neutralization of a slow highly charged ion interacting with a solid where there are many Rydberg levels that can give rise to correlated transitions to degenerate energy states. We have investigated IDE for a wide range of projectiles and solid targets by measuring the resulting x-ray emission. The characteristic features of the x-ray spectra suggest that IDE occurs above the surface of the solid.
引用
收藏
页码:429031 / 429037
页数:7
相关论文
共 22 条
[1]  
Arnau A, 1997, SURF SCI REP, V27, P117
[2]   THE ADSORPTION OF WATER AND OXYGEN ON AG(110) - A STUDY OF THE INTERACTIONS AMONG WATER-MOLECULES, HYDROXYL-GROUPS, AND OXYGEN-ATOMS [J].
BANGE, K ;
MADEY, TE ;
SASS, JK ;
STUVE, EM .
SURFACE SCIENCE, 1987, 183 (03) :334-362
[3]   PRODUCTION OF HOLLOW ATOMS BY THE EXCITATION OF HIGHLY CHARGED IONS IN INTERACTION WITH A METALLIC SURFACE [J].
BRIAND, JP ;
DEBILLY, L ;
CHARLES, P ;
ESSABAA, S ;
BRIAND, P ;
GELLER, R ;
DESCLAUX, JP ;
BLIMAN, S ;
RISTORI, C .
PHYSICAL REVIEW LETTERS, 1990, 65 (02) :159-162
[4]   X-ray studies of the interaction of N, O, and Ne hydrogenlike ions below surfaces [J].
Briand, JP ;
Schneider, D ;
Bardin, S ;
Khemliche, H ;
Jin, J ;
Xie, Z ;
Prior, M .
PHYSICAL REVIEW A, 1997, 55 (05) :3947-3950
[5]   ON THE MECHANISM OF FORMATION OF HOLLOW ATOMS BELOW A SURFACE [J].
BRIAND, JP ;
DETAT, B ;
SCHNEIDER, D ;
CLARK, M ;
DECAUX, V .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 87 (1-4) :138-141
[6]  
Bu Y., 1993, SURF SCI, V298, P94, DOI DOI 10.1016/0039-6028(93)90084-W
[7]   ABOVE-SURFACE NEUTRALIZATION OF HIGHLY CHARGED IONS - THE CLASSICAL OVER-THE-BARRIER MODEL [J].
BURGDORFER, J ;
LERNER, P ;
MEYER, FW .
PHYSICAL REVIEW A, 1991, 44 (09) :5674-5685
[8]   The adsorption and reactions of water on Si(100)-2x1 and Si(111)-7x7 surfaces [J].
Flowers, MC ;
Jonathan, NBH ;
Morris, A ;
Wright, S .
SURFACE SCIENCE, 1996, 351 (1-3) :87-102
[9]   Charge equilibration time of slow, highly charged ions in solids [J].
Hattass, M ;
Schenkel, T ;
Hamza, AV ;
Barnes, AV ;
Newman, MW ;
McDonald, JW ;
Niedermayr, TR ;
Machicoane, GA ;
Schneider, DH .
PHYSICAL REVIEW LETTERS, 1999, 82 (24) :4795-4798
[10]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454