Enhanced visible light photocatalytic H2 evolution of metal-free g-C3N4/SiC heterostructured photocatalysts

被引:143
作者
Wang, Biao [1 ,2 ]
Zhang, Jingtao [3 ]
Huang, Feng [1 ,3 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Photocatalysis; Water splitting; Carbon nitride; Silicon carbide; Heterojunction; CARBON NITRIDE NANOSHEETS; HYDROGEN-EVOLUTION; WATER; SEMICONDUCTORS; PHOTOSTABILITY; H-2-PRODUCTION; GENERATION; FRAMEWORKS; STRATEGY; NANORODS;
D O I
10.1016/j.apsusc.2016.07.056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
g-C3N4 has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C3N4/SiC composites were prepared via in situ synthesis of g-C3N4 on the surface of SiC, with which g-C3N4 shows tight interaction (chemical bonding). The g-C3N4/SiC composites exhibit high stability in H-2 production under irradiation with visible light (lambda >= 420 nm), demonstrating a maximum of 182 mu mol g(-1) h(-1), being 3.4 times higher than that of pure g-C3N4. The enhanced photocatalytic H-2 production ability for g-C3N4/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C3N4. This study may provide new insights into the development of g-C3N4-based composites as stable and efficient photocatalysts for H-2 production from water splitting. (C) 2016 Published by Elsevier B.V.
引用
收藏
页码:449 / 456
页数:8
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