The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution

被引：8

作者：

Akchurin, RK

Andreev, AY

Govorkov, OI

Marmalyuk, AA

Petrovsky, AV

机构：

[1] Moscow State Acad Fine Chem Technol, Moscow 117571, Russia

[2] R&D Inst Polus, Moscow 117342, Russia

[3] Sigm Plus Co, Moscow 117342, Russia

来源：

APPLIED SURFACE SCIENCE | 2002年 / 188卷 / 1-2期

关键词：

InGaAs; QW; elastic strain; in distribution;

D O I：

10.1016/S0169-4332(01)00748-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The experimental and calculation data on indium distribution in (Al)GaAs/InGaAs/(Al) GaAs quantum well (QW) structures are presented. Experimental examination revealed increase of In concentration in the growth direction in single QW and relative shift of composition in close-spaced multiple QWs. The results of calculation based on consideration of elastic strain energy contribution to the free energy of mixing are in good agreement with experimental data and testify that the elastic stresses give essential contribution in the observed effect. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：209 / 213

页数：5

共 10 条

[1] MOVPE growth of highly strained InGaAs/GaAs quantum wells [J].