Ultra-Low Power Circuit Design using Double-Gate FinFETs

被引：0

作者：

Tejashwini, G. Devi ^{[1
]}

Raju, I. B. K. ^{[1
]}

Chary, Gnaneshwara ^{[1
]}

机构：

[1] Padmasri Dr BV Raju Inst Technol, CVD, ECE Dept, Narsapur, AP, India

来源：

2014 2ND INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) | 2014年

关键词：

FinFETs; Analog Circuits; Digital Circuits; SPICE; ultra-low power;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design and performance of basic Digital (AND, OR, NAND, NOR, XOR, XNOR, NOT, Half-Adder) and Analog (Current Mirror, Cascode Current Mirror, Comparator) circuits using 20nm FinFET technology has presented. 20nm FinFET technology has been used for improvement in performance and for optimizing power mainly in Analog circuits. In this work, for different widths of NMOS and PMOS and low voltages, better results of power performance is observed in both digital and analog circuits using FinFET technology.

引用

页数：5

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