Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

被引：4

作者：

Chang, C-Y ^{[1
]}

Yokoyama, M. ^{[1
]}

Kim, S-H ^{[1
]}

Ichikawa, O. ^{[2
]}

Osada, T. ^{[2
]}

Hata, M. ^{[2
]}

Takenaka, M. ^{[1
]}

Takagi, S. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Sumitomo Chem Corp Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

InGaAs; Metal gate electrodes; High-k dielectrics; Interface state density; HYDROGEN ABSORPTION; C-V;

D O I：

10.1016/j.mee.2013.03.086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO2/InGaAs MOS interfaces than those with Al and Au. However, the Al2O3/InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high-k and gate metals must be carefully examined for realizing optimum gate stacks. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：28 / 30

页数：3

共 14 条

[1] EVIDENCE FOR SUBSURFACE HYDROGEN ON PD(110) - AN INTERMEDIATE BETWEEN CHEMISORBED AND DISSOLVED SPECIES [J].

BEHM, RJ ;

PENKA, V ;

CATTANIA, MG ;

CHRISTMANN, K ;

ERTL, G .

JOURNAL OF CHEMICAL PHYSICS, 1983, 78 (12) :7486-7490

[2] Hydrogen absorption in palladium films sensed by changes in their resistivity [J].

Cabrera, AL ;

AguayoSoto, R .

CATALYSIS LETTERS, 1997, 45 (1-2) :79-83

[3]

Egard M., 2011, IEDM

[4] Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces [J].

Engel-Herbert, Roman ;

Hwang, Yoontae ;

Stemmer, Susanne .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)

[5] KINETICS OF HYDROGEN ABSORPTION BY PD(110) [J].

KAY, BD ;

PEDEN, CHF ;

GOODMAN, DW .

PHYSICAL REVIEW B, 1986, 34 (02) :817-821

[6] Spectroscopic analysis of Al and N diffusion in HfO2 [J].

Lysaght, P. S. ;

Woicik, J. C. ;

Sahiner, M. A. ;

Price, J. ;

Weiland, C. ;

Kirsch, P. D. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)

[7] Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics [J].

Martens, K. ;

Wang, W. ;

De Keersmaecker, K. ;

Borghs, G. ;

Groeseneken, G. ;

Maes, H. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2146-2149

[8] 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density [J].

Suzuki, R. ;

Taoka, N. ;

Yokoyama, M. ;

Lee, S. ;

Kim, S. H. ;

Hoshii, T. ;

Yasuda, T. ;

Jevasuwan, W. ;

Maeda, T. ;

Ichikawa, O. ;

Fukuhara, N. ;

Hata, M. ;

Takenaka, M. ;

Takagi, S. .

APPLIED PHYSICS LETTERS, 2012, 100 (13)

[9] Carrier-transport-enhanced channel CMOS for improved power consumption and performance [J].

Takagi, Shinichi ;

Irisawa, Toshifurni ;

Tezuka, Tsutomu ;

Numata, Toshinori ;

Nakaharai, Shu ;

Hirashita, Norio ;

Moriyama, Yoshihiko ;

Usuda, Koji ;

Toyoda, Eiji ;

Dissanayake, Sanjeewa ;

Shichijo, Masato ;

Nakane, Ryosho ;

Sugahara, Satoshi ;

Takenaka, Mitsuru ;

Sugiyama, Naoharu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) :21-39

[10] AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces [J].

Taoka, Noriyuki ;

Yokoyama, Masafumi ;

Kim, Sang Hyeon ;

Suzuki, Rena ;

Hoshii, Takuya ;

Iida, Ryo ;

Lee, Sunghoon ;

Urabe, Yuji ;

Miyata, Noriyuki ;

Yasuda, Tetsuji ;

Yamada, Hisashi ;

Fukuhara, Noboru ;

Hata, Masahiko ;

Takenaka, Mitsuru ;

Takagi, Shinichi .

MICROELECTRONIC ENGINEERING, 2011, 88 (07) :1087-1090

← 1 2 →