Single wafer wet clean challenges and solution for 32nm

被引：4

作者：

Toshima, Takayuki ^{[1
]}

Nishikido, Shuuichi ^{[1
]}

Yamasaka, Miyako ^{[2
]}

Suni, Kang ^{[3
]}

机构：

[1] Tokyo Electron Kyushu LTD, Proc Technol Dev, Koshi, Kumamoto 8611116, Japan

[2] Tokyo Electron Kyushu LTD, Proc Technol Dev, Nirasaki, Yamanashi 4070192, Japan

[3] Tokyo Electron LTD, Surface Preparat Syst, Tokyo 1076325, Japan

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012) | 2012年 / 44卷 / 01期

关键词：

D O I：

10.1149/1.3694331

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Until recently, many semiconductor companies had been using batch cleaning systems, regarding surface cleaning as wet process. However, the adoption of single wafer cleaning systems has become mainstream for cleaning processes because process control and flexibility are considered to be superior to that of batch systems. With single wafer systems we observed many reactions occurring on the wafer surface, which indicated the importance and difficulty of wafer surface preparation rather than simply cleaning. From these observations we will report on the problems and challenges that have to be addressed as device geometry and die sizes continue to shrink.

引用

页码：305 / 311

页数：7