Transparent conductive gallium-doped indium oxide nanowires for optoelectronic applications

被引：13

作者：

Mohamed, S. H. ^{[1
,2
]}

机构：

[1] Qassim Univ, Coll Sci, Dept Phys, Buryadh 51452, Saudi Arabia

[2] Sohag Univ, Fac Sci, Dept Phys, Sohag 82524, Egypt

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 62卷 / 06期

关键词：

OPTICAL-PROPERTIES; ZINC-OXIDE; SYSTEM; GROWTH; FILMS;

D O I：

10.3938/jkps.62.902

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Undoped and Ga-doped In2O3 nanowires (NWs) were synthesized by using vapor-liquid-solid (VLS) growth and were characterized as transparent conductive oxides for future generations of optoelectronic devices. A low amount of Ga was obtained due to the low solubility of Ga2O3 in In2O3. The incorporation of Ga into In2O3 nanowires decreases the grain size, the transmittance and the optical band gap. The Ga-doped In2O3 NWs exhibited a low sheet resistance of 12.2 +/- 2 Omega/a- and a mean transmittance value in the visible region of 77.1, which favor its use as a promising transparent conductive oxide.

引用

页码：902 / 905

页数：4

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