Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

被引：5

作者：

Lal, Shalini ^{[1
]}

Lu, Jing ^{[1
]}

Gupta, Geetak ^{[1
]}

Thibeault, Brian J. ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 12期

关键词：

Bonded aperture vertical electron transistor (BAVET); current aperture vertical electron transistor (CAVET); direct wafer-bonding; field-plate; GaN; impact-ionization; InGaAs; vertical transistor;

D O I：

10.1109/LED.2013.2286954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unipolar transistor consisting of an In0.53Ga0.47As (InGaAs) channel and a III-Nitride (III-N)-based drain-region with a maximum on-current of 192 mA/mm is reported. This unique device is realized by employing wafer-bonding to a current aperture vertical electron transistor and is referred to as a wafer-bonded aperture vertical electron transistor (BAVET). An In0.52Al0.48As/InGaAs layer-stack is used for the gate-barrier and channel regions, while the aperture, current-blocking-layer (CBL) and drift regions are part of the III-N layer structure. This letter investigates the factors affecting the off-characteristics of a BAVET by varying the overlaps of the gate-CBL (L-GO) and gate-aperture (L-GA) regions. A dual-functionality of modulating the channel and providing a field-plate effect is realized using the L-GO and L-GA parts of the gate, respectively. We report that the improvement in channel-pinch off is a stronger function of L-GA than it is of L-GO. A weak pinch off in the InGaAs channel is shown to be the consequence of impact-ionization leading to channel-breakdown, and using a gate-aperture overlap dramatically improves both the pinch off and off-state-breakdown in BAVETs.

引用

页码：1500 / 1502

页数：3

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