Contact printing of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays for multi-channel field-effect transistors and their photoresponse performances

被引：38

作者：

Liu, Zhe ^{[1
]}

Liang, Bo ^{[1
]}

Chen, Gui ^{[1
]}

Yu, Gang ^{[1
]}

Xie, Zhong ^{[1
]}

Gao, Lina ^{[1
]}

Chen, Di ^{[1
]}

Shen, Guozhen ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Michael Gratzel Ctr Mesoscop Solar Cells, Wuhan 430074, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2013年 / 1卷 / 01期

关键词：

SCALE HIERARCHICAL ORGANIZATION; ULTRAHIGH QUANTUM-EFFICIENCY; ELECTRONICS; SENSORS;

D O I：

10.1039/c2tc00055e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ternary oxides, Zn2GeO4 and In2Ge2O7 nanowires, are promising n-type semiconductors with outstanding transport properties for high performance electronic devices. By using the direct contact printing process, we reported the assembly of horizontally aligned Zn2GeO4 and In2Ge2O7 nanowire arrays to be used as building blocks for high performance multi-channel field-effect transistors. The as-fabricated multi-channel transistors exhibited higher voltage stability and repeatability than their single nanowire based counterparts. The effective mobilities of the multi-channel field-effect transistors were calculated to be 25.44 cm(2) V-1 s(-1) and 11.9 cm(2) V-1 s(-1), comparable to the single-channel FETs. The as-fabricated multi-channel transistors were also used as high performance photodetectors, exhibited a high sensitivity to ultraviolet light illumination with a photoconductive gain and quantum efficiency as high as 1.034 x 10(5) and 1.032 x 10(7)% for Zn2GeO4 nanowires and 2.58 x 10(5) and 2.617 x 10(7)% for In2Ge2O7 nanowires.

引用

页码：131 / 137

页数：7

共 36 条

[1] Broadband ZnO single-nanowire light-emitting diode [J].