Solution-processed dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene transistor memory based on phosphorus-doped silicon nanoparticles as a nano-floating gate

被引：8
|
作者：
Kimura, Yu [1 ]
Hamaguchi, Azusa [1 ]
Ikeda, Yoshinori [1 ]
Nagase, Takashi [2 ,3 ]
Naito, Hiroyoshi [2 ,3 ]
Takimiya, Kazuo [4 ]
Shiro, Takashi [1 ]
机构：
[1] Teijin Ltd, Elect Mat Dev Project, Hino, Tokyo 1918512, Japan
[2] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
[3] Osaka Prefecture Univ, Res Inst Mol Elect Devices, Sakai, Osaka 5998531, Japan
[4] RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 10期
关键词：
FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; PERFORMANCE; STABILITY;
D O I：
10.7567/APEX.8.101601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-performance organic field-effect transistor (OFET) memories were developed by a simple solution process using phosphorus-doped silicon nanoparticles (Si NPs) and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) precursor-polystyrene (PS) blends. Si NPs were doped with phosphorus to control the ionization potential and functioned as a nano-floating gate. DNTT precursor-PS blends were converted to DNTT/PS layers on a Si NP layer by thermal annealing. The OFET memories clearly exhibited a memory window of 20V and a notably large threshold voltage (V-th) shift of 40V after the application of negative and positive voltages to the gate electrode. (C) 2015 The Japan Society of Applied Physics
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页数：4
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