Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O3 films deposited by sputtering on Si substrate

被引：7

作者：

Vélu, G ^{[1
]}

Rèmiens, G ^{[1
]}

机构：

[1] Univ Valenciennes & Hainaut Cambresis, Lab Mat Avances Ceram, F-59600 Maubeuge, France

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(98)00216-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lead zirconate titanate (PZT) thin films were deposited by radio-frequency (r.f.) magnetron sputtering with stoichiometric single oxide target on silicon substrates. The influence of the growth conditions (with or without substrate heating) and the post-annealing treatments (conventional or rapid thermal annealing) on the film properties in terms of structure and microstructure was systematically evaluated. The electrical properties such as the dielectric constant, the loss factor, the leakage current and the ferroelectric properties have been characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：241 / 250

页数：10

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